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AO4435 P-Channel Enhancement Mode Field Effect Transistor

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About This File

AO4435 P-Channel Enhancement Mode Field Effect Transistor

The AO4435 uses advanced trench technology to

provide excellent RDS(ON), and ultra-low low gate charge

with a 25V gate rating. This device is suitable for use as

a load switch or in PWM applications.

-RoHS Compliant

-AO4435 is Halogen Free

 

Product Summary

VDS = -30V

ID = -10.5A (VGS = -20V)

RDS(ON)

RDS(ON)

RDS(ON)

100% UIS Tested

100% Rg Tested


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